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? semiconductor components industries, llc, 2001 may, 2001 rev. 4 1 publication order number: mc33362/d mc33362 high voltage switching regulator the mc33362 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 120 vac line source. this integrated circuit features an onchip 500 v/2.0 a sensefet power switch, 250 v active offline startup fet, duty cycle controlled oscillator, current limiting comparator with a programmable threshold and leading edge blanking, latching pulse width modulator for double pulse suppression, high gain error amplifier, and a trimmed internal bandgap reference. protective features include cyclebycycle current limiting, input undervoltage lockout with hysteresis, output overvoltage protection, and thermal shutdown. this device is available in a 16lead dualinline and wide body surface mount packages. ? onchip 500 v, 2.0 a sensefet power switch ? rectified 120 vac line source operation ? onchip 250 v active offline startup fet ? latching pwm for double pulse suppression ? cyclebycycle current limiting ? input undervoltage lockout with hysteresis ? output overvoltage protection comparator ? trimmed internal bandgap reference ? internal thermal shutdown this device contains 221 active transistors. startup reg osc thermal leb pwm dc output startup input gnd 4, 5, 12, 13 mirror 7 ac input regulator output 6 8 c t r t pwm latch ea i pk v cc 3 11 16 9 10 1 compensation voltage feedback input power switch drain overvoltage protection input driver ovp uvlo s r q figure 1. simplified application device package shipping ordering information mc33362dw so16w 47 units/rail mc33362p pdip16 http://onsemi.com 25 units/rail mc33362dwr2 so16w 1000 tape & reel marking diagrams a = assembly location wl = wafer lot yy = year ww = work week 1 16 pdip16 p suffix case 648e 1 16 so16w dw suffix case 751n 116 13 12 11 10 9 3 4 5 6 7 8 (top view) startup input v cc gnd r t c t regulator output power switch drain gnd compensation pin connections overvoltage protection input voltage feedback input mc33362p awlyyww mc33362dw awlyyww
mc33362 http://onsemi.com 2 maximum ratings (note 1.) rating symbol value unit power switch (pin 16) drain voltage drain current v ds i ds 500 2.0 v a startup input voltage (pin 1, note 2.) pin 3 = gnd pin 3 1000 m f to ground v in 250 400 v power supply voltage (pin 3) v cc 40 v input voltage range voltage feedback input (pin 10) compensation (pin 9) overvoltage protection input (pin 11) r t (pin 6) c t (pin 7) v ir 1.0 to v reg v thermal characteristics p suffix, dualinline case 648e thermal resistance, junctiontoair thermal resistance, junctiontocase (pins 4, 5, 12, 13) r q ja r q jc 80 15 c/w dw suffix, surface mount case 751n thermal resistance, junctiontoair thermal resistance, junctiontocase (pins 4, 5, 12, 13) refer to figures 16 and 17 for additional thermal information. r q ja r q jc 95 15 operating junction temperature t j 25 to +150 c storage temperature t stg 55 to +150 c electrical characteristics (v cc = 20 v, r t = 10 k, c t = 390 pf, c pin 8 = 1.0 m f, for typical values t j = 25 c, for min/max values t j is the operating junction temperature range that applies (note 3.), unless otherwise noted.) characteristic symbol min typ max unit regulator (pin 8) output voltage (i o = 0 ma, t j = 25 c) v reg 5.5 6.5 7.5 v line regulation (v cc = 20 v to 40 v) reg line 30 500 mv load regulation (i o = 0 ma to 10 ma) reg load 44 200 mv total output variation over line, load, and temperature v reg 5.3 8.0 v oscillator (pin 7) frequency c t = 390 pf t j = 25 c (v cc = 20 v) t j = t low to t high (v cc = 20 v to 40 v) c t = 2.0 nf t j = 25 c (v cc = 20 v) t j = t low to t high (v cc = 20 v to 40 v) f osc 260 255 60 59 285 67.5 310 315 75 76 khz frequency change with voltage (v cc = 20 v to 40 v) d f osc / d v 0.1 2.0 khz 1. this device series contains esd protection and exceeds the following tests: human body model 2000 v per milstd883, method 3015. machine model method 200 v. 2. maximum power dissipation limits must be observed. 3. tested junction temperature range for the mc33362: t low = 25 ct high = +125 c
mc33362 http://onsemi.com 3 electrical characteristics (v cc = 20 v, r t = 10 k, c t = 390 pf, c pin 8 = 1.0 m f, for typical values t j = 25 c, for min/max values t j is the operating junction temperature range that applies (note 4.), unless otherwise noted.) characteristic symbol min typ max unit error amplifier (pins 9, 10) voltage feedback input threshold v fb 2.52 2.6 2.68 v line regulation (v cc = 20 v to 40 v, t j = 25 c) reg line 0.6 5.0 mv input bias current (v fb = 2.6 v) i ib 20 500 na open loop voltage gain (t j = 25 c) a vol 82 db gain bandwidth product (f = 100 khz, t j = 25 c) gbw 1.0 mhz output voltage swing high state (i source = 100 m a, v fb < 2.0 v) low state (i sink = 100 m a, v fb > 3.0 v) v oh v ol 4.0 5.3 0.2 0.35 v overvoltage detection (pin 11) input threshold voltage v th 2.47 2.6 2.73 v input bias current (v in = 2.6 v) i ib 100 500 na pwm comparator (pins 7, 9) duty cycle maximum (v fb = 0 v) minimum (v fb = 2.7 v) dc (max) dc (min) 48 50 0 52 0 % power switch (pin 16) drainsource onstate resistance (i d = 200 ma) t j = 25 c t j = t low to t high r ds(on) 4.4 6.0 12 w drainsource offstate leakage current (v ds = 500 v) i d(off) 0.2 50 m a rise time t r 50 ns fall time t f 50 ns overcurrent comparator (pin 16) current limit threshold (r t = 10 k) i lim 0.7 0.9 1.1 a startup control (pin 1) peak startup current (v in = 200 v) v cc = 0 v v cc = (v th(on) 0.2 v) i start 55 26 ma offstate leakage current (v in = 50 v, v cc = 20 v) i d(off) 40 200 m a undervoltage lockout (pin 3) startup threshold (v cc increasing) v th(on) 11 14.5 18 v minimum operating voltage after turnon v cc(min) 7.5 9.5 11.5 v total device (pin 3) power supply current startup (v cc = 10 v, pin 1 open) operating i cc 0.3 3.6 0.5 5.0 ma 4. tested junction temperature range for the mc33362: t low = 25 ct high = +125 c
mc33362 http://onsemi.com 4 r t , timing resistor (k w ) 5.0 2.0 5.0 1.0 m i pk , power switch peak drain current (a ) v cc = 20 v c t = 1.0 m f t a = 25 c f osc , oscillator frequency (hz) figure 2. oscillator frequency versus timing resistor r t , timing resistor (k w ) figure 3. power switch peak drain current versus timing resistor 500 k 200 k 100 k 50 k 20 k 10 k 1.5 1.0 0.8 0.6 0.4 0.2 10 15 20 30 50 7.0 10 15 20 30 40 50 v cc = 20 v t a = 25 c c t = 100 pf c t = 200 pf c t = 500 pf c t = 1.0 nf c t = 2.0 nf c t = 5.0 nf c t = 10 nf inductor supply voltage and inductance value are adjusted so that i pk turn-off is achieved at 5.0 m s. 0 0 1.0 70 10 100 5.0 1.0 v sat , output saturation voltage (v) i o , output load current (ma) d max , maximum output duty cycle (%) timing resistor ratio f, frequency (hz) figure 4. oscillator charge/discharge current versus timing resistor r t , timing resistor (k w ) figure 5. maximum output duty cycle versus timing resistor ratio figure 6. error amp open loop gain and phase versus frequency figure 7. error amp output saturation voltage versus load current q , excess phase (degrees) 0.7 0.5 0.3 0.2 0.15 0.1 80 60 40 20 0 -20 60 50 40 30 -1.0 -2.0 2.0 1.0 0 10 15 20 30 50 2.0 3.0 5.0 7.0 10 100 1.0 k 10 k 100 k 1.0 m 10 m 0.2 0.4 0.6 0.8 1.0 0 30 60 90 120 150 180 r d /r t ratio discharge resistor pin 6 to gnd v cc = 20 v c t = 2.0 nf t a = 25 c r c /r t ratio charge resistor pin 6 to v reg v cc = 20 v v o = 1.0 to 4.0 v r l = 5.0 m w c l = 2.0 pf t a = 25 c gain phase v cc = 20 v t a = 25 c source saturation) (load to ground) sink saturation (load to v ref ) v cc = 20 v t a = 25 c gnd v ref
mc33362 http://onsemi.com 5 1.80 v 0.5 v/div 1.0 m s/div 20 mv/div 1.0 m s/div v cc = 20 v a v = -1.0 c l = 10 pf t a = 25 c figure 8. error amplifier small signal transient response figure 9. error amplifier large signal transient response v cc = 20 v a v = -1.0 c l = 10 pf t a = 25 c 1.75 v 1.70 v 3.00 v 1.75 v 0.50 v 0.5 200 0 60 -50 10 0 0 c oss , drain-source capacitance (pf) v ds , drain-source voltage (v) v cc = 20 v t a = 25 c i pk , peak startup current (ma) v cc , power supply voltage (v) v pin 1 = 200 v t a = 25 c r ds(on) , drain-source on-resistance ( ) w t a , ambient temperature ( c) i d = 200 ma v reg , regulator voltage change (mv) figure 10. regulator output voltage change versus source current i reg , regulator source current (ma) figure 11. peak startup current versus power supply voltage v cc = 20 v r t = 10 k c pin 8 = 1.0 m f t a = 25 c figure 12. power switch drainsource onresistance versus temperature figure 13. power switch drainsource capacitance versus voltage pulse tested with an on-time of 20 m s to 300 m s at < 1.0% duty cycle. the on-time is adjusted at pin 1 for a maximum peak current out of pin 3. d pulse tested at 5.0 ms with < 1.0% duty cycle so that t j is as close to t a as possible. c oss measured at 1.0 mhz with 50 mvpp. -20 -40 -60 -80 8.0 6.0 4.0 2.0 0 40 20 0 150 50 100 0 4.0 8.0 12 16 20 2.0 4.0 6.0 8.0 10 12 14 -25 0 25 50 75 150 100 5.0 50 500 125
mc33362 http://onsemi.com 6 0 4.0 i cc , supply current (ma) v cc , supply voltage (v) c t = 390 pf figure 14. supply current versus supply voltage c t = 2.0 nf r t = 10 k pin 1 = open pin 4, 5, 10, 11, 12, 13 = gnd t a = 25 c 3.2 2.4 1.6 0.8 0 10 20 30 40 0.01 100 r ja , thermal resistance t, time (s) figure 15. dw and p suffix transient thermal resistance q junction-to-air ( c/w) 0.1 1.0 10 100 10 1.0 l = 12.7 mm of 2.0 oz. copper. refer to figures 16 and 17. 0 100 r ja , thermal resistance l, length of copper (mm) p d(max) for t a = 50 c q junction-to-air ( c/w) p d , maximum power dissipation (w) r q ja 90 70 60 80 50 10 20 30 40 50 2.8 2.4 1.6 1.2 2.0 0.8 0.4 0 40 30 0 0 ?? ?? ?? graphs represent symmetrical layout 3.0 mm printed circuit board heatsink example l l 100 80 60 40 20 10 20 30 40 50 l, length of copper (mm) p d , maximum power dissipation (w) 5.0 4.0 3.0 2.0 1.0 0 p d(max) for t a = 70 c 2.0 oz copper ??? ??? ??? r q ja r , thermal resistance ja q junction-to-air ( c/w) ??? ??? ??? graphs represent symmetrical layout 3.0 mm l l 2.0 oz copper ?? ?? ?? printed circuit board heatsink example figure 16. dw suffix (sop16l) thermal resistance and maximum power dissipation versus p.c.b. copper length figure 17. p suffix (dip16) thermal resistance and maximum power dissipation versus p.c.b. copper length
mc33362 http://onsemi.com 7 pin function description pin function description 1 startup input this pin connects directly to the rectified ac line voltage source. internally pin 1 is tied to the drain of a high voltage startup mosfet. during startup, the mosfet supplies internal bias, and charges an external capacitor that connects from the v cc pin to ground. 2 this pin has been omitted for increased spacing between the rectified ac line voltage on pin 1 and the v cc potential on pin 3. 3 v cc this is the positive supply voltage input. during startup, power is supplied to this input from pin 1. when v cc reaches the uvlo upper threshold, the startup mosfet turns off and power is supplied from an auxiliary transformer winding. 4, 5, 12, 13 ground these pins are the control circuit grounds. they are part of the ic lead frame and provide a thermal path from the die to the printed circuit board. 6 r t resistor r t connects from this pin to ground. the value selected will program the current limit comparator threshold and affect the oscillator frequency. 7 c t capacitor c t connects from this pin to ground. the value selected, in conjunction with resistor r t , programs the oscillator frequency. 8 regulator output this 6.5 v output is available for biasing external circuitry. it requires an external bypass capacitor of at least 1.0 m f for stability. 9 compensation this pin is the error amplifier output and is made available for loop compensation. it can be used as an input to directly control the pwm comparator. 10 voltage feedback input this is the inverting input of the error amplifier. it has a 2.6 v threshold and normally connects through a resistor divider to the converter output, or to a voltage that represents the converter output. 11 overvoltage protection input this input provides runaway output voltage protection due to an external component or connection failure in the control loop feedback signal path. it has a 2.6 v threshold and normally connects through a resistor divider to the converter output, or to a voltage that represents the converter output. 14, 15 these pins have been omitted for increased spacing between the high voltages present on the power switch drain, and the ground potential on pins 12 and 13. 16 power switch drain this pin is designed to directly drive the converter transformer and is capable of switching a maximum of 500 v and 2.0 a.
mc33362 http://onsemi.com 8 figure 18. representative block diagram oscillator pwm pwm latch current limit thermal shutdown error startup control band gap regulator uvlo 14.5 v/ 9.5 v ovp 2.6 v current 2.6 v regulator output 6.5 v r c 8 6 7 4, 5, 12, 13 gnd 11 16 9 10 1 voltage compensation power switch overvoltage ac input dc 2.25 i i 9.0 r s q driver 3 startup input 450 t t comparator leading edge blanking mirror 4 i 270 m a v cc comparator protection input drain feedback input amplifier output figure 19. timing diagram capacitor c compensation pwm comparator output oscillator output pwm latch q output power switch gate drive leading edge blanking input (power switch drain current) normal pwm operating range output overload current limit threshold 0.6 v 2.6 v current limi t propagation delay t
mc33362 http://onsemi.com 9 operating description introduction the mc33362 represents a new higher level of integration by providing all the active high voltage power, control, and protection circuitry required for implementation of a flyback or forward converter on a single monolithic chip. this device is designed for direct operation from a rectified 120 vac line source and requires a minimum number of external components to implement a complete converter. a description of each of the functional blocks is given below, and the representative block and timing diagrams are shown in figures 18 and 19. oscillator and current mirror the oscillator frequency is controlled by the values selected for the timing components r t and c t . resistor r t programs the oscillator charge/discharge current via the current mirror 4 i output, figure 4. capacitor c t is charged and discharged by an equal magnitude internal current source and sink. this generates a symmetrical 50 percent duty cycle waveform at pin 7, with a peak and valley threshold of 2.6 v and 0.6 v respectively. during the discharge of c t , the oscillator generates an internal blanking pulse that holds the inverting input of the and gate driver high. this causes the power switch gate drive to be held in a low state, thus producing a well controlled amount of output deadtime. the amount of deadtime is relatively constant with respect to the oscillator frequency when operating below 1.0 mhz. the maximum power switch duty cycle at pin 16 can be modified from the internal 50% limit by providing an additional charge or discharge current path to c t , figure 20. in order to increase the maximum duty cycle, a discharge current resistor r d is connected from pin 7 to ground. to decrease the maximum duty cycle, a charge current resistor r c is connected from pin 7 to the regulator output. figure 5 shows an obtainable range of maximum output duty cycle versus the ratio of either r c or r d with respect to r t . figure 20. maximum duty cycle modification pwm current regulator output 1.0 r c 8 6 2.25 i i t t mirror 4 i oscillator comparator r d r c 7 current limit reference blanking pulse the formula for the charge/discharge current along with the oscillator frequency are given below. the frequency formula is a first order approximation and is accurate for c t values greater than 500 pf. for smaller values of c t , refer to figure 2. note that resistor r t also programs the current limit comparator threshold. i chg dscg 5.4 r t f i chg dscg 4c t pwm comparator and latch the pulse width modulator consists of a comparator with the oscillator ramp voltage applied to the noninverting input, while the error amplifier output is applied into the inverting input. the oscillator applies a set pulse to the pwm latch while c t is discharging, and upon reaching the valley voltage, power switch conduction is initiated. when c t charges to a voltage that exceeds the error amplifier output, the pwm latch is reset, thus terminating power switch conduction for the duration of the oscillator rampup period. this pwm comparator/latch combination prevents multiple output pulses during a given oscillator clock cycle. the timing diagram shown in figure 19 illustrates the power switch duty cycle behavior versus the compensation voltage. current limit comparator and power switch the mc33362 uses cyclebycycle current limiting as a means of protecting the output switch transistor from overstress. each oncycle is treated as a separate situation. current limiting is implemented by monitoring the output switch current buildup during conduction, and upon sensing an overcurrent condition, immediately turning off the switch for the duration of the oscillator rampup period. the power switch is constructed as a sensefet allowing a virtually lossless method of monitoring the drain current. it consists of a total of 3770 cells, of which 50 are connected to a 9.0 w groundreferenced sense resistor. the current sense comparator detects if the voltage across the sense resistor exceeds the reference level that is present at the inverting input. if exceeded, the comparator quickly resets the pwm latch, thus protecting the power switch. the current limit reference level is generated by the 2.25 i output of the current mirror. this current causes a reference voltage to appear across the 450 w resistor. this voltage level, as well as the oscillator charge/discharge current are both set by resistor r t . therefore when selecting the values for r t and c t , r t must be chosen first to set the power switch peak drain current, while c t is chosen second to set the desired oscillator frequency. a graph of the power switch peak drain current versus r t is shown in figure 3 with the related formula below. i pk 12.3 r t 1000 1.115
mc33362 http://onsemi.com 10 the power switch is designed to directly drive the converter transformer and is capable of switching a maximum of 500 v and 2.0 a. proper device voltage snubbing and heatsinking are required for reliable operation. a leading edge blanking circuit was placed in the current sensing signal path. this circuit prevents a premature reset of the pwm latch. the premature reset is generated each time the power switch is driven into conduction. it appears as a narrow voltage spike across the current sense resistor, and is due to the mosfet gate to source capacitance, transformer interwinding capacitance, and output rectifier recovery time. the leading edge blanking circuit has a dynamic behavior in that it masks the current signal until the power switch turnon transition is completed. the current limit propagation delay time is typically 233 ns. this time is measured from when an overcurrent appears at the power switch drain, to the beginning of turnoff. error amplifier an fully compensated error amplifier with access to the inverting input and output is provided for primary side voltage sensing, figure 18. it features a typical dc voltage gain of 82 db, and a unity gain bandwidth of 1.0 mhz with 78 degrees of phase margin, figure 6. the noninverting input is internally biased at 2.6 v 3.1% and is not pinned out. the error amplifier output is pinned out for external loop compensation and as a means for directly driving the pwm comparator. the output was designed with a limited sink current capability of 270 m a, allowing it to be easily overridden with a pullup resistor. this is desirable in applications that require secondary side voltage sensing, figure 21. in this application, the voltage feedback input is connected to the regulator output. this disables the error amplifier by placing its output into the sink state, allowing the optocoupler transistor to directly control the pwm comparator. overvoltage protection an overvoltage protection comparator is included to eliminate the possibility of runaway output voltage. this condition can occur if the control loop feedback signal path is broken due to an external component or connection failure. the comparator is normally used to monitor the primary side v cc voltage. when the 2.6 v threshold is exceeded, it will immediately turn off the power switch, and protect the load from a severe overvoltage condition. this input can also be driven from external circuitry to inhibit converter operation. undervoltage lockout an undervoltage lockout comparator has been incorporated to guarantee that the integrated circuit has sufficient voltage to be fully functional before the output stage is enabled. the uvlo comparator monitors the v cc voltage at pin 3 and when it exceeds 14.5 v, the reset signal is removed from the pwm latch allowing operation of the power switch. to prevent erratic switching as the threshold is crossed, 5.0 v of hysteresis is provided. startup control an internal startup control circuit with a high voltage enhancement mode mosfet is included within the mc33362. this circuitry allows for increased converter efficiency by eliminating the external startup resistor, and its associated power dissipation, commonly used in most offline converters that utilize a uc3842 type of controller. rectified ac line voltage is applied to the startup input, pin 1. this causes the mosfet to enhance and supply internal bias as well as charge current to the v cc bypass capacitor that connects from pin 3 to ground. when v cc reaches the uvlo upper threshold of 14.5 v, the ic commences operation and the startup mosfet is turned off. operating bias is now derived from the auxiliary transformer winding, and all of the device power is efficiently converted down from the rectified ac line. the startup mosfet will provide an initial peak current of 55 ma, figure 11, which decreases rapidly as v cc and the die temperature rise. the steady state current will self limit in the range of 12 ma with v cc shorted to ground. the startup mosfet is rated at a maximum of 250 v with v cc shorted to ground, and 400 v when charging a v cc capacitor of 1000 m f or less. regulator a low current 6.5 v regulated output is available for biasing the error amplifier and any additional control system circuitry. it is capable of up to 10 ma and has shortcircuit protection. this output requires an external bypass capacitor of at least 1.0 m f for stability. thermal shutdown and package internal thermal circuitry is provided to protect the power switch in the event that the maximum junction temperature is exceeded. when activated, typically at 155 c, the latch is forced into a `reset' state, disabling the power switch. the latch is allowed to `set' when the power switch temperature falls below 145 c. this feature is provided to prevent catastrophic failures from accidental device overheating. it is not intended to be used as a substitute for proper heatsinking. the mc33362 is contained in a heatsinkable plastic dualinline package in which the die is mounted on a special heat tab copper alloy lead frame. this tab consists of the four center ground pins that are specifically designed to improve thermal conduction from the die to the circuit board. figures 16 and 17 show a simple and effective method of utilizing the printed circuit board medium as a heat dissipater by soldering these pins to an adequate area of copper foil. this permits the use of standard layout and mounting practices while having the ability to halve the junction to air thermal resistance. the examples are for a symmetrical layout on a singlesided board with two ounce per square foot of copper. figure 23 shows a practical example of a printed circuit board layout
mc33362 http://onsemi.com 11 that utilizes the copper foil as a heat dissipater. note that a jumper was added to the layout from pins 8 to 10 in order to enhance the copper area near the device for improved thermal conductivity. the application circuit requires two ounce copper foil in order to obtain 20 watts of continuous output power at room temperature. figure 21. 20 w offline converter osc pwm pwm latch thermal ea startup reg uvlo 14.5 v/ 9.5 v ovp 2.6 v 2.6 v r1 8 6 7 4, 5, 12, 13 11 16 9 10 1 92 to 138 5.05 v/4.0 a r s q driver 3 leb mirror 270 m a 8.2 k vac input c3 1.5 nf c4 1.0 r2 2.7 k ic1 mc33362 5 4 r4 16 k r3 2.7 k c2 10 c1 47 c6 47 pf c5 4.0 nf r6 100 k 1.0 w dc output c12 1.0 c11 220 r8 220 r9 2.80 k c7 100 nf 1 2 3 1 2 r10 2.74 k ic3 tl431b c8 330 c9 330 c10 330 t1 d6 mur 120 r5 39 d5 mur 160 l1 5.0 m h r7 2.2 k 1.0 w ic2 moc 8103 1n4004 d3 d4 d2 d1 f1 1.0 a i limit d7 mbr 2515l test conditions results line regulation v in = 92 vac to 138 vac, i o 4.0 a d = 1.0 mv load regulation v in = 115 vac, i o = 1.0 a to 4.0 a d = 9.0 mv output ripple v in = 115 vac, i o = 4.0 a triangular = 10 mvpp spike = 60 mvpp efficiency v in = 115 vac, i o = 4.0 a 78.4% this data was taken with the components listed below mounted on the printed circuit board shown in figure 23. for high efficiency and small circuit board size, the sanyo oscon capacitors are recommended for c8, c9, c10 and c11. c8, c9, c10 = sanyo oscon #6sa330m, 330 m f 6.3 v. c11 = sanyo oscon #10sa220m, 220 m f 10 v. d7 = mbr2515l mounted on aavid #592502b03400 heatsink. l1 = coilcraft s5088a, 5.0 m h, 0.11 w . t1 = coilcraft s5069a primary: 58 turns of # 26 awg, pin 1 = start, pin 8 = finish. two layers 0.002 mylar tape. secondary: 4 turns of # 18 awg, 2 strands bifiliar wound, pin 5 = start, pin 4 = finish. two layers 0.002 mylar tape. auxiliary: 10 turns of # 26 awg wound in center of bobbin, pin 2 = start, pin 7 = finish. two layers 0.002 mylar tape. gap: 0.014 total for a primary inductance (l p ) of 330 m h. core and bobbin: coilcraft pt1950, e187, 3f3 material. figure 22. converter test data
mc33362 http://onsemi.com 12 figure 23. printed circuit board and component layout (circuit of figure 21) mc33362 (top view) (bottom view) 2.25" 2.75" caution! high voltages d1 d2 f1 t1 c1 r6 c5 c6 d6 ic2 d4 d3 ac line input r4 r1 r2 j1 r3 c9 c10 ic3 dc output c4 r8 l1 d7 c3 c7 r10 c8 r9 c11 r7 d5 c2 r3 ic1 c12 r5 1
mc33362 http://onsemi.com 13 package dimensions pdip16 p suffix case 648e01 issue o notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension l to center of leads when formed parallel. 4. dimension a and b does not include mold protrusion. 5. mold flash or protrusions shall not exceed 0.25 (0.010). 6. rounded corner optional. a b 16 9 18 d g h s c 13 pl s b m 0.25 (0.010) t t seating plane j m l r p f k s a dim min max min max millimeters inches a 0.740 0.760 18.80 19.30 b 0.245 0.260 6.23 6.60 c 0.145 0.175 3.69 4.44 d 0.015 0.021 0.39 0.53 f 0.050 0.070 1.27 1.77 g 0.100 bsc 2.54 bsc h 0.050 bsc 1.27 bsc j 0.008 0.015 0.21 0.38 k 0.120 0.140 3.05 3.55 l 0.295 0.305 7.50 7.74 m 0 10 0 10 p 0.200 bsc 5.08 bsc r 0.300 bsc 7.62 bsc s 0.015 0.035 0.39 0.88 so16w dw suffix case 751n01 issue o dim min max min max inches millimeters a 10.15 10.45 0.400 0.411 b 7.40 7.60 0.292 0.299 c 2.35 2.65 0.093 0.104 d 0.35 0.49 0.014 0.019 f 0.50 0.90 0.020 0.035 g 1.27 bsc 0.050 bsc j 0.25 0.32 0.010 0.012 k 0.10 0.25 0.004 0.009 m 0 7 0 7 p 10.05 10.55 0.395 0.415 r 0.25 0.75 0.010 0.029 m b m 0.010 (0.25) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimensions a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.13 (0.005) total in excess of d dimension at maximum material condition. a b p g 9x d 13x seating plane t s a m 0.010 (0.25) b s t 16 9 8 1 f j r x 45 m t s s 2.54 bsc 0.100 bsc t 3.81 bsc 0.150 bsc c k
mc33362 http://onsemi.com 14 notes
mc33362 http://onsemi.com 15 notes
mc33362 http://onsemi.com 16 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mc33362/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland

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